IRF6645TRPBF Priser (USD) [137353stk Lager]
- 1 pcs$0.27063
- 4,800 pcs$0.26929
- Delnummer:
- IRF6645TRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 100V 5.7A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Dioder - RF, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - IGBT-er - singel, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - programmerbar enhet and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6645TRPBF electronic components. IRF6645TRPBF can be shipped within 24 hours after order. If you have any demands for IRF6645TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6645TRPBF Produktegenskaper
Delnummer :
IRF6645TRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 100V 5.7A DIRECTFET
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.7A (Ta), 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
35 mOhm @ 5.7A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 50µA
Gate Lading (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.2W (Ta), 42W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ SJ
Pakke / sak :
DirectFET™ Isometric SJ
Siste nytt
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