SQJB90EP-T1_GE3 Priser (USD) [152759stk Lager]
- 1 pcs$0.24213
- 3,000 pcs$0.20465
- Delnummer:
- SQJB90EP-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2 N-CH 80V POWERPAK SO8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Arrays, Dioder - Zener - Singel, Transistorer - JFET-er, Transistorer - spesialformål, Dioder - RF, Transistorer - Bipolar (BJT) - Arrays and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQJB90EP-T1_GE3 electronic components. SQJB90EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJB90EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJB90EP-T1_GE3 Produktegenskaper
Delnummer :
SQJB90EP-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2 N-CH 80V POWERPAK SO8
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
2 N-Channel (Dual)
FET-funksjon :
Standard
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
30A (Tc)
Rds On (Max) @ Id, vgs :
21.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 25V
Kraft - Maks :
48W
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® SO-8 Dual
Leverandørenhetspakke :
PowerPAK® SO-8 Dual
Siste nytt
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