Vishay Semiconductor Diodes Division - 1N6480-E3/96

KEY Part #: K6452922

1N6480-E3/96 Priser (USD) [826014stk Lager]

  • 1 pcs$0.04478
  • 6,000 pcs$0.04049

Delnummer:
1N6480-E3/96
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 200V 1A DO213AB. Rectifiers 1.0 Amp 200 Volt
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Transistorer - spesialformål, Transistorer - IGBT-er - moduler, Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - singel and Transistorer - JFET-er ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division 1N6480-E3/96 electronic components. 1N6480-E3/96 can be shipped within 24 hours after order. If you have any demands for 1N6480-E3/96, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N6480-E3/96 Produktegenskaper

Delnummer : 1N6480-E3/96
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 200V 1A DO213AB
Serie : SUPERECTIFIER®
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 200V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 1A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : -
Nåværende - Omvendt lekkasje @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 8pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-213AB, MELF (Glass)
Leverandørenhetspakke : DO-213AB
Driftstemperatur - veikryss : -65°C ~ 175°C

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