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Hvis plasseringen din ikke er oppført, kan du velge ett av følgende:

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Samsung Semiconductor - K4G80325FC-HC25

KEY Part #: K7359725

[17839stk Lager]

    Delnummer:
    K4G80325FC-HC25
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    8 Gb 256M x 32 8.0 Gbps 16K / 32 ms 170FBGA Mass Production.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: MODULE, LPDDR5, GDDR6, GDDR5, DDR3, SLC Nand, HBM Flarebolt and LPDDR4 ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor K4G80325FC-HC25 electronic components. K4G80325FC-HC25 can be shipped within 24 hours after order. If you have any demands for K4G80325FC-HC25, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4G80325FC-HC25 Produktegenskaper

    Delnummer : K4G80325FC-HC25
    Produsent : Samsung Semiconductor
    Beskrivelse : 8 Gb 256M x 32 8.0 Gbps 16K / 32 ms 170FBGA Mass Production
    Serie : DDR3
    tetthet : 8 Gb
    Org. : 256M x 32
    Hastighet : 8.0 Gbps
    Forfriske : 16K / 32 ms
    Pakke : 170FBGA
    Product Status : Mass Production

    Siste nytt

    SSDs, DRAM and gaming: Unlocking a new level of performance
    Samsung Showcases Its Latest Silicon Technologies for the Next Wave of Innovation at Annual Tech Day
    Automotive Driven by Small Packages Under the Hood
    5G and Memory - from Connected Thinking to Connected Living
    Mass Production of Fifth-Generation V-NAND has Started
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Z-SSD SZ985
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Speed for the next generation of mobile devices
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    How Will 5G Impact on Memory?
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