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- Delnummer:
- IPD50R280CEATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 500V 13A PG-TO252.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Transistorer - FET, MOSFET - Arrays, Dioder - Variabel kapasitet (Varicaps, Varactors), Dioder - Bridge likerettere, Transistorer - JFET-er and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPD50R280CEATMA1 electronic components. IPD50R280CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R280CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R280CEATMA1 Produktegenskaper
Delnummer :
IPD50R280CEATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 500V 13A PG-TO252
Serie :
CoolMOS™ CE
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
500V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, vgs :
280 mOhm @ 4.2A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 350µA
Gate Lading (Qg) (Max) @ Vgs :
32.6nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
773pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
119W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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