SIS782DN-T1-GE3 Priser (USD) [340585stk Lager]
- 1 pcs$0.10860
- Delnummer:
- SIS782DN-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 30V 16A POWERPAK1212.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Singel, Tyristorer - SCR-er - moduler, Transistorer - spesialformål, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Tyristorer - DIAC, SIDAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIS782DN-T1-GE3 electronic components. SIS782DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIS782DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIS782DN-T1-GE3 Produktegenskaper
Delnummer :
SIS782DN-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 30V 16A POWERPAK1212
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
9.5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
30.5nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1025pF @ 15V
FET-funksjon :
Schottky Diode (Body)
Effektdissipasjon (maks) :
41W (Tc)
Driftstemperatur :
-50°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® 1212-8
Pakke / sak :
PowerPAK® 1212-8
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