Diodes Incorporated - DMT68M8LSS-13

KEY Part #: K6394108

DMT68M8LSS-13 Priser (USD) [376192stk Lager]

1 pcs$0.09832

Delnummer:: DMT68M8LSS-13

Produsent:: Diodes Incorporated

Detaljert beskrivelse:: MOSFET N-CHANNEL 60V 28.9A 8SO.

Manufacturer's standard lead time:: På lager

Holdbarhet:: Ett år

Brikke fra:: Hong Kong

RoHS:

Betalingsmetode:

Forsendelsesmåte:

Familiekategorier:: KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR, Dioder - RF, Transistorer - Bipolar (BJT) - RF, Tyristorer - DIAC, SIDAC, Dioder - Zener - Singel, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - En and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...

Konkurransefordel:: We specialize in Diodes Incorporated DMT68M8LSS-13 electronic components. DMT68M8LSS-13 can be shipped within 24 hours after order. If you have any demands for DMT68M8LSS-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

DMT68M8LSS-13 Produktegenskaper

Delnummer : DMT68M8LSS-13

Produsent : Diodes Incorporated

Beskrivelse : MOSFET N-CHANNEL 60V 28.9A 8SO

Serie : -

Delstatus : Active

FET Type : N-Channel

Teknologi : MOSFET (Metal Oxide)

Drenering til kildespenning (Vdss) : 60V

Strøm - Kontinuerlig avløp (Id) @ 25 ° C : 28.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Rds On (Max) @ Id, vgs : 8.5 mOhm @ 13.5A, 10V

Vgs (th) (Max) @ Id : 3V @ 250µA

Gate Lading (Qg) (Max) @ Vgs : 31.8nC @ 10V

Vgs (maks) : ±20V

Input Capacitance (Ciss) (Max) @ Vds : 2107pF @ 30V

FET-funksjon : -

Effektdissipasjon (maks) : 1.9W (Ta)

Driftstemperatur : -55°C ~ 150°C (TJ)

Monteringstype : Surface Mount

Leverandørenhetspakke : 8-SO

Pakke / sak : 8-SOIC (0.154", 3.90mm Width)

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