Vishay Semiconductor Diodes Division - MSE1PJHM3J/89A

KEY Part #: K6453386

MSE1PJHM3J/89A Priser (USD) [984434stk Lager]

  • 1 pcs$0.03757
  • 9,000 pcs$0.03304

Delnummer:
MSE1PJHM3J/89A
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE GEN PURP 600V 1A MICROSMP. Rectifiers 1.0A, 600V, ESD PROTECTION, SM
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - singel, Transistorer - programmerbar enhet, Dioder - Zener - Singel, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - Arrays and Dioder - likerettere - singel ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division MSE1PJHM3J/89A electronic components. MSE1PJHM3J/89A can be shipped within 24 hours after order. If you have any demands for MSE1PJHM3J/89A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MSE1PJHM3J/89A Produktegenskaper

Delnummer : MSE1PJHM3J/89A
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE GEN PURP 600V 1A MICROSMP
Serie : Automotive, AEC-Q101
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 600V
Nåværende - Gjennomsnittlig rettet (Io) : 1A
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.1V @ 1A
Hastighet : Standard Recovery >500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 780ns
Nåværende - Omvendt lekkasje @ Vr : 1µA @ 600V
Capacitance @ Vr, F : 5pF @ 4V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : DO-219AD
Leverandørenhetspakke : MicroSMP (DO-219AD)
Driftstemperatur - veikryss : -55°C ~ 175°C

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