GP2M004A060PG Priser (USD) [2649stk Lager]
- 1 pcs$0.66060
- 10 pcs$0.58450
- 100 pcs$0.46200
- 500 pcs$0.33890
- 1,000 pcs$0.26756
- Delnummer:
- GP2M004A060PG
- Produsent:
- Global Power Technologies Group
- Detaljert beskrivelse:
- MOSFET N-CH 600V 4A IPAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - IGBT-er - Arrays, Tyristorer - TRIAC, Dioder - Zener - Arrays, Tyristorer - DIAC, SIDAC, Dioder - Zener - Singel, Transistorer - JFET-er and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Global Power Technologies Group GP2M004A060PG electronic components. GP2M004A060PG can be shipped within 24 hours after order. If you have any demands for GP2M004A060PG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP2M004A060PG Produktegenskaper
Delnummer :
GP2M004A060PG
Produsent :
Global Power Technologies Group
Beskrivelse :
MOSFET N-CH 600V 4A IPAK
Serie :
-
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
2.5 Ohm @ 2A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
545pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
86.2W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
I-PAK
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
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