Toshiba Semiconductor and Storage - 1SS427,L3M

KEY Part #: K6455928

1SS427,L3M Priser (USD) [2750629stk Lager]

  • 1 pcs$0.01419
  • 10,000 pcs$0.01412
  • 30,000 pcs$0.01329
  • 50,000 pcs$0.01246
  • 100,000 pcs$0.01107

Delnummer:
1SS427,L3M
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
DIODE GEN PURP 80V 100MA SOD923. Diodes - General Purpose, Power, Switching 300mA SW DIODE
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - Arrays, Transistorer - programmerbar enhet and Transistorer - FET, MOSFET - En ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage 1SS427,L3M electronic components. 1SS427,L3M can be shipped within 24 hours after order. If you have any demands for 1SS427,L3M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS427,L3M Produktegenskaper

Delnummer : 1SS427,L3M
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : DIODE GEN PURP 80V 100MA SOD923
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 80V
Nåværende - Gjennomsnittlig rettet (Io) : 100mA
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.2V @ 100mA
Hastighet : Small Signal =< 200mA (Io), Any Speed
Omvendt gjenopprettingstid (trr) : 1.6ns
Nåværende - Omvendt lekkasje @ Vr : 500nA @ 80V
Capacitance @ Vr, F : 0.3pF @ 0V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : SOD-923
Leverandørenhetspakke : SOD-923
Driftstemperatur - veikryss : -55°C ~ 150°C

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