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Hvis plasseringen din ikke er oppført, kan du velge ett av følgende:

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Samsung Semiconductor - M393A4K40CB2-CTD

KEY Part #: K7359896

[25177stk Lager]

    Delnummer:
    M393A4K40CB2-CTD
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    DDR4 RDIMM 32 GB 2R x 4 2666 Mbps 1.2 V 288 (2G x 4) x 36 Mass Production.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: SLC Nand, GDDR6, HBM Aquabolt, MODULE, LPDDR5, DDR3, LPDDR4X and DDR4 ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor M393A4K40CB2-CTD electronic components. M393A4K40CB2-CTD can be shipped within 24 hours after order. If you have any demands for M393A4K40CB2-CTD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    M393A4K40CB2-CTD Produktegenskaper

    Delnummer : M393A4K40CB2-CTD
    Produsent : Samsung Semiconductor
    Beskrivelse : DDR4 RDIMM 32 GB 2R x 4 2666 Mbps 1.2 V 288 (2G x 4) x 36 Mass Production
    Serie : DDR3
    DDR : DDR4
    DIMM-type : RDIMM
    tetthet : 32 GB
    Rang x Org. : 2R x 4
    Hastighet : 2666 Mbps
    Spenning : 1.2 V
    Antall Pin : 288
    Component Sammensetning : (2G x 4) x 36
    Product Status : Mass Production

    Siste nytt

    Samsung Announces Production of Industry’s First 2GB LPDDR3 Mobile Memory, Using 30nm-class Technology
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Now Producing Four Gigabit LPDDR3 Mobile DRAM, Using 20nm-class Process Technology
    Automotive Driven by Small Packages Under the Hood
    Autonomous Driving and the Quest for Safety
    Speed for the next generation of mobile devices
    5G and Memory - from Connected Thinking to Connected Living
    Samsung wins 46 CES 2020 Innovation Awards for Outstanding Design and Engineering
    High Bandwidth Memory is Catching on for Data-intensive Computing
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    Samsung Electronics Starts Mass Producing Industry’s First 8-Gigabit Graphics DRAM (GDDR5)
    Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing
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