VS-GB100TH120U Priser (USD) [261stk Lager]
- 1 pcs$177.68022
- 12 pcs$163.71967
- Delnummer:
- VS-GB100TH120U
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- IGBT 1200V 200A 1136W INT-A-PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Tyristorer - DIAC, SIDAC, Power Driver-moduler, Dioder - likerettere - matriser, Dioder - Zener - Singel, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - singel and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120U electronic components. VS-GB100TH120U can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120U, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB100TH120U Produktegenskaper
Delnummer :
VS-GB100TH120U
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
IGBT 1200V 200A 1136W INT-A-PAK
Serie :
-
Delstatus :
Active
IGBT-type :
NPT
konfigurasjon :
Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
200A
Kraft - Maks :
1136W
Vce (på) (Max) @ Vge, Ic :
3.6V @ 15V, 100A
Nåværende - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
8.45nF @ 20V
Input :
Standard
NTC Thermistor :
No
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
Double INT-A-PAK (3 + 4)
Leverandørenhetspakke :
Double INT-A-PAK
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