Vishay Semiconductor Diodes Division - VS-GB100TH120U

KEY Part #: K6533233

VS-GB100TH120U Priser (USD) [261stk Lager]

  • 1 pcs$177.68022
  • 12 pcs$163.71967

Delnummer:
VS-GB100TH120U
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
IGBT 1200V 200A 1136W INT-A-PAK.
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - Bipolar (BJT) - RF, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Zener - Arrays, Tyristorer - SCR, Transistorer - IGBT-er - moduler and Transistorer - Bipolar (BJT) - Singel ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division VS-GB100TH120U electronic components. VS-GB100TH120U can be shipped within 24 hours after order. If you have any demands for VS-GB100TH120U, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GB100TH120U Produktegenskaper

Delnummer : VS-GB100TH120U
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : IGBT 1200V 200A 1136W INT-A-PAK
Serie : -
Delstatus : Active
IGBT-type : NPT
konfigurasjon : Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) : 1200V
Nåværende - Samler (Ic) (Maks) : 200A
Kraft - Maks : 1136W
Vce (på) (Max) @ Vge, Ic : 3.6V @ 15V, 100A
Nåværende - Collector Cutoff (Max) : 5mA
Input Capacitance (Cies) @ Vce : 8.45nF @ 20V
Input : Standard
NTC Thermistor : No
Driftstemperatur : -40°C ~ 150°C (TJ)
Monteringstype : Chassis Mount
Pakke / sak : Double INT-A-PAK (3 + 4)
Leverandørenhetspakke : Double INT-A-PAK

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