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- Delnummer:
- IRF5803D2PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET P-CH 40V 3.4A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Singel, Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - RF, Dioder - RF, Transistorer - IGBT-er - Arrays, Transistorer - JFET-er and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF5803D2PBF electronic components. IRF5803D2PBF can be shipped within 24 hours after order. If you have any demands for IRF5803D2PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF5803D2PBF Produktegenskaper
Delnummer :
IRF5803D2PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET P-CH 40V 3.4A 8-SOIC
Serie :
FETKY™
Delstatus :
Obsolete
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
112 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1110pF @ 25V
FET-funksjon :
Schottky Diode (Isolated)
Effektdissipasjon (maks) :
2W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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