IRF3205STRRPBF Priser (USD) [102494stk Lager]
- 1 pcs$0.38150
- 800 pcs$0.34644
- Delnummer:
- IRF3205STRRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 55V 110A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - Arrays, Dioder - likerettere - matriser, Tyristorer - SCR, Transistorer - spesialformål, Transistorer - FET, MOSFET - RF and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF3205STRRPBF electronic components. IRF3205STRRPBF can be shipped within 24 hours after order. If you have any demands for IRF3205STRRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF3205STRRPBF Produktegenskaper
Delnummer :
IRF3205STRRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 55V 110A D2PAK
Serie :
HEXFET®
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
8 mOhm @ 62A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
146nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3247pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
200W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D2PAK
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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