IRF7855PBF Priser (USD) [651stk Lager]
- 1 pcs$0.79021
- 10 pcs$0.70074
- 100 pcs$0.55369
- 500 pcs$0.42940
- 1,000 pcs$0.32068
- Delnummer:
- IRF7855PBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 12A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - TRIAC, Transistorer - JFET-er, Dioder - Bridge likerettere, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - FET, MOSFET - Arrays and Tyristorer - SCR-er - moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF7855PBF electronic components. IRF7855PBF can be shipped within 24 hours after order. If you have any demands for IRF7855PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7855PBF Produktegenskaper
Delnummer :
IRF7855PBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 12A 8-SOIC
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
9.4 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
39nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1560pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.5W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SO
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
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