Infineon Technologies - IDP30E65D2XKSA1

KEY Part #: K6440179

IDP30E65D2XKSA1 Priser (USD) [73006stk Lager]

  • 1 pcs$0.53559
  • 500 pcs$0.42961

Delnummer:
IDP30E65D2XKSA1
Produsent:
Infineon Technologies
Detaljert beskrivelse:
DIODE GEN PURP 650V 60A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Power Driver-moduler, Transistorer - IGBT-er - moduler, Dioder - Zener - Singel, Transistorer - programmerbar enhet, Dioder - Bridge likerettere, Dioder - likerettere - singel and Transistorer - Bipolar (BJT) - Arrays ...
Konkurransefordel:
We specialize in Infineon Technologies IDP30E65D2XKSA1 electronic components. IDP30E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP30E65D2XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDP30E65D2XKSA1 Produktegenskaper

Delnummer : IDP30E65D2XKSA1
Produsent : Infineon Technologies
Beskrivelse : DIODE GEN PURP 650V 60A TO220-2
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 650V
Nåværende - Gjennomsnittlig rettet (Io) : 60A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis : 2.2V @ 30A
Hastighet : Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) : 42ns
Nåværende - Omvendt lekkasje @ Vr : 40µA @ 650V
Capacitance @ Vr, F : -
Monteringstype : Through Hole
Pakke / sak : TO-220-2
Leverandørenhetspakke : PG-TO220-2-1
Driftstemperatur - veikryss : -40°C ~ 175°C

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