IDP30E65D2XKSA1 Priser (USD) [73006stk Lager]
- 1 pcs$0.53559
- 500 pcs$0.42961
- Delnummer:
- IDP30E65D2XKSA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- DIODE GEN PURP 650V 60A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - IGBT-er - moduler, Transistorer - IGBT-er - Arrays, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Singel and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Infineon Technologies IDP30E65D2XKSA1 electronic components. IDP30E65D2XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP30E65D2XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP30E65D2XKSA1 Produktegenskaper
Delnummer :
IDP30E65D2XKSA1
Produsent :
Infineon Technologies
Beskrivelse :
DIODE GEN PURP 650V 60A TO220-2
Serie :
-
Delstatus :
Active
Diodetype :
Standard
Spenning - DC Reverse (Vr) (Max) :
650V
Nåværende - Gjennomsnittlig rettet (Io) :
60A (DC)
Spenning - Fremover (Vf) (Maks) @ Hvis :
2.2V @ 30A
Hastighet :
Fast Recovery =< 500ns, > 200mA (Io)
Omvendt gjenopprettingstid (trr) :
42ns
Nåværende - Omvendt lekkasje @ Vr :
40µA @ 650V
Capacitance @ Vr, F :
-
Monteringstype :
Through Hole
Pakke / sak :
TO-220-2
Leverandørenhetspakke :
PG-TO220-2-1
Driftstemperatur - veikryss :
-40°C ~ 175°C
Siste nytt
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