Toshiba Semiconductor and Storage - 1SS307E,L3F

KEY Part #: K6453229

1SS307E,L3F Priser (USD) [3127807stk Lager]

  • 1 pcs$0.19775
  • 10 pcs$0.14040
  • 25 pcs$0.11533
  • 100 pcs$0.09223
  • 250 pcs$0.06706
  • 500 pcs$0.05449
  • 1,000 pcs$0.04192
  • 2,500 pcs$0.03773

Delnummer:
1SS307E,L3F
Produsent:
Toshiba Semiconductor and Storage
Detaljert beskrivelse:
DIODE GEN PURP 80V 100MA SC79. Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Power Driver-moduler, Transistorer - Bipolar (BJT) - RF, Dioder - RF, Transistorer - spesialformål, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor ...
Konkurransefordel:
We specialize in Toshiba Semiconductor and Storage 1SS307E,L3F electronic components. 1SS307E,L3F can be shipped within 24 hours after order. If you have any demands for 1SS307E,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS307E,L3F Produktegenskaper

Delnummer : 1SS307E,L3F
Produsent : Toshiba Semiconductor and Storage
Beskrivelse : DIODE GEN PURP 80V 100MA SC79
Serie : -
Delstatus : Active
Diodetype : Standard
Spenning - DC Reverse (Vr) (Max) : 80V
Nåværende - Gjennomsnittlig rettet (Io) : 100mA
Spenning - Fremover (Vf) (Maks) @ Hvis : 1.3V @ 100mA
Hastighet : Small Signal =< 200mA (Io), Any Speed
Omvendt gjenopprettingstid (trr) : -
Nåværende - Omvendt lekkasje @ Vr : 10nA @ 80V
Capacitance @ Vr, F : 6pF @ 0V, 1MHz
Monteringstype : Surface Mount
Pakke / sak : SC-79, SOD-523
Leverandørenhetspakke : SC-79
Driftstemperatur - veikryss : 150°C (Max)

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