IPB80N06S2L06ATMA2 Priser (USD) [90469stk Lager]
- 1 pcs$0.43220
- 1,000 pcs$0.41159
- Delnummer:
- IPB80N06S2L06ATMA2
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 55V 80A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - likerettere - matriser, Transistorer - JFET-er, Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB80N06S2L06ATMA2 electronic components. IPB80N06S2L06ATMA2 can be shipped within 24 hours after order. If you have any demands for IPB80N06S2L06ATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB80N06S2L06ATMA2 Produktegenskaper
Delnummer :
IPB80N06S2L06ATMA2
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 55V 80A TO263-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
6 mOhm @ 69A, 10V
Vgs (th) (Max) @ Id :
2V @ 180µA
Gate Lading (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3800pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO263-3-2
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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