IPU95R3K7P7AKMA1 Priser (USD) [80621stk Lager]
- 1 pcs$0.48500
- Delnummer:
- IPU95R3K7P7AKMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 950V 2A TO251.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - RF, Dioder - likerettere - singel, Tyristorer - TRIAC, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Singel, Transistorer - FET, MOSFET - RF and Dioder - Zener - Singel ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPU95R3K7P7AKMA1 electronic components. IPU95R3K7P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPU95R3K7P7AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU95R3K7P7AKMA1 Produktegenskaper
Delnummer :
IPU95R3K7P7AKMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 950V 2A TO251
Serie :
CoolMOS™ P7
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
950V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
3.7 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 40µA
Gate Lading (Qg) (Max) @ Vgs :
6nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
196pF @ 400V
FET-funksjon :
-
Effektdissipasjon (maks) :
22W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
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