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- Delnummer:
- IPU103N08N3 G
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 80V 50A TO251-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - programmerbar enhet, Dioder - Bridge likerettere, Tyristorer - DIAC, SIDAC, Transistorer - Bipolar (BJT) - Singel, Power Driver-moduler, Transistorer - FET, MOSFET - En and Dioder - likerettere - matriser ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPU103N08N3 G electronic components. IPU103N08N3 G can be shipped within 24 hours after order. If you have any demands for IPU103N08N3 G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU103N08N3 G Produktegenskaper
Delnummer :
IPU103N08N3 G
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 80V 50A TO251-3
Serie :
OptiMOS™
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
80V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
10.3 mOhm @ 46A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 46µA
Gate Lading (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2410pF @ 40V
FET-funksjon :
-
Effektdissipasjon (maks) :
100W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
PG-TO251-3
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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