TSM7ND65CI Priser (USD) [62346stk Lager]
- 1 pcs$0.62715
- Delnummer:
- TSM7ND65CI
- Produsent:
- Taiwan Semiconductor Corporation
- Detaljert beskrivelse:
- 650V 7A SINGLE N-CHANNEL POWER M.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - singel, Transistorer - IGBT-er - singel, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - FET, MOSFET - Arrays and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Taiwan Semiconductor Corporation TSM7ND65CI electronic components. TSM7ND65CI can be shipped within 24 hours after order. If you have any demands for TSM7ND65CI, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM7ND65CI Produktegenskaper
Delnummer :
TSM7ND65CI
Produsent :
Taiwan Semiconductor Corporation
Beskrivelse :
650V 7A SINGLE N-CHANNEL POWER M
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
1.35 Ohm @ 1.8A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1124pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
50W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
ITO-220
Pakke / sak :
TO-220-3 Full Pack, Isolated Tab
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