IRFD220PBF Priser (USD) [76032stk Lager]
- 1 pcs$0.45991
- 10 pcs$0.40932
- 100 pcs$0.30592
- 500 pcs$0.23724
- 1,000 pcs$0.18729
- Delnummer:
- IRFD220PBF
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 200V 800MA 4-DIP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Transistorer - FET, MOSFET - Arrays, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - programmerbar enhet, Dioder - RF, Transistorer - FET, MOSFET - RF and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix IRFD220PBF electronic components. IRFD220PBF can be shipped within 24 hours after order. If you have any demands for IRFD220PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD220PBF Produktegenskaper
Delnummer :
IRFD220PBF
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 200V 800MA 4-DIP
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
800 mOhm @ 480mA, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
4-DIP, Hexdip, HVMDIP
Pakke / sak :
4-DIP (0.300", 7.62mm)
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