SI7190DP-T1-GE3 Priser (USD) [89398stk Lager]
- 1 pcs$0.96999
- 10 pcs$0.87550
- 100 pcs$0.70345
- 500 pcs$0.54713
- 1,000 pcs$0.45334
- Delnummer:
- SI7190DP-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 250V 18.4A PPAK SO-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Dioder - RF, Transistorer - IGBT-er - Arrays, Tyristorer - SCR, Transistorer - Bipolar (BJT) - Arrays, Transistorer - JFET-er, Transistorer - IGBT-er - singel and Transistorer - Bipolar (BJT) - Arrays, pre-partisk ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI7190DP-T1-GE3 electronic components. SI7190DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7190DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7190DP-T1-GE3 Produktegenskaper
Delnummer :
SI7190DP-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 250V 18.4A PPAK SO-8
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
118 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2214pF @ 125V
FET-funksjon :
-
Effektdissipasjon (maks) :
5.4W (Ta), 96W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® SO-8
Pakke / sak :
PowerPAK® SO-8
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