IRF1018EPBF Priser (USD) [69274stk Lager]
- 1 pcs$0.57280
- 10 pcs$0.50799
- 100 pcs$0.40159
- 500 pcs$0.29460
- 1,000 pcs$0.23258
- Delnummer:
- IRF1018EPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 79A TO-220AB.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - JFET-er, Transistorer - IGBT-er - moduler, Transistorer - programmerbar enhet, Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Singel and Transistorer - FET, MOSFET - En ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF1018EPBF electronic components. IRF1018EPBF can be shipped within 24 hours after order. If you have any demands for IRF1018EPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF1018EPBF Produktegenskaper
Delnummer :
IRF1018EPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 79A TO-220AB
Serie :
HEXFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
8.4 mOhm @ 47A, 10V
Vgs (th) (Max) @ Id :
4V @ 100µA
Gate Lading (Qg) (Max) @ Vgs :
69nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2290pF @ 50V
FET-funksjon :
-
Effektdissipasjon (maks) :
110W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220AB
Pakke / sak :
TO-220-3
Siste nytt
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