Delnummer :
IPD65R250E6XTMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH TO252-3
Delstatus :
Last Time Buy
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
650V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
250 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 400µA
Gate Lading (Qg) (Max) @ Vgs :
45nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 1000V
Effektdissipasjon (maks) :
208W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PG-TO252-3
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63