Samsung Semiconductor - K4A4G165WF-BITD

KEY Part #: K7359588

[19606stk Lager]


    Delnummer:
    K4A4G165WF-BITD
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Sample.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: DDR3, HBM Flarebolt, LPDDR5, GDDR6, HBM Aquabolt, LPDDR3, SLC Nand and MODULE ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor K4A4G165WF-BITD electronic components. K4A4G165WF-BITD can be shipped within 24 hours after order. If you have any demands for K4A4G165WF-BITD, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4A4G165WF-BITD Produktegenskaper

    Delnummer : K4A4G165WF-BITD
    Produsent : Samsung Semiconductor
    Beskrivelse : 4 Gb 256M x 16 2666 Mbps 1.2 V -40 ~ 95 °C 96FBGA Sample
    Serie : DDR4
    tetthet : 4 Gb
    Org. : 256M x 16
    Hastighet : 2666 Mbps
    Spenning : 1.2 V
    Temp. : -40 ~ 95 °C
    Pakke : 96FBGA
    Product Status : Sample

    Du kan også være interessert i
    • K4A4G085WE-BIRC

      Samsung Semiconductor

      4 Gb 512M x 8 2400 Mbps 1.2 V -40 ~ 95 °C 78FBGA.

    • K4ABG165WA-MCWE

      Samsung Semiconductor

      32 Gb 2G x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Sample.

    • K4A4G085WE-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production.

    • K4A4G085WF-BCTD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production.

    • K4A4G085WF-BITD

      Samsung Semiconductor

      4 Gb 512M x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Sample.

    • K4A4G165WE-BCWE

      Samsung Semiconductor

      4 Gb 256M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production.