TJ8S06M3L(T6L1,NQ) Priser (USD) [202426stk Lager]
- 1 pcs$0.20200
- 2,000 pcs$0.20099
- Delnummer:
- TJ8S06M3L(T6L1,NQ)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET P-CH 60V 8A DPAK-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Dioder - Bridge likerettere, Dioder - RF, Transistorer - JFET-er, Transistorer - FET, MOSFET - RF, Transistorer - IGBT-er - singel, Dioder - Zener - Singel and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TJ8S06M3L(T6L1,NQ) electronic components. TJ8S06M3L(T6L1,NQ) can be shipped within 24 hours after order. If you have any demands for TJ8S06M3L(T6L1,NQ), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TJ8S06M3L(T6L1,NQ) Produktegenskaper
Delnummer :
TJ8S06M3L(T6L1,NQ)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET P-CH 60V 8A DPAK-3
Serie :
U-MOSVI
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, vgs :
104 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
3V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (maks) :
+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds :
890pF @ 10V
FET-funksjon :
-
Effektdissipasjon (maks) :
27W (Tc)
Driftstemperatur :
175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DPAK+
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
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