RN2313(TE85L,F) Priser (USD) [7551stk Lager]
- 3,000 pcs$0.01910
- 6,000 pcs$0.01661
- 15,000 pcs$0.01412
- 30,000 pcs$0.01329
- 75,000 pcs$0.01246
- 150,000 pcs$0.01107
- Delnummer:
- RN2313(TE85L,F)
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- TRANS PREBIAS PNP 0.1W USM.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - RF, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - IGBT-er - singel, Transistorer - spesialformål and Transistorer - FET, MOSFET - Arrays ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage RN2313(TE85L,F) electronic components. RN2313(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2313(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2313(TE85L,F) Produktegenskaper
Delnummer :
RN2313(TE85L,F)
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
TRANS PREBIAS PNP 0.1W USM
Serie :
-
Delstatus :
Active
Transistortype :
PNP - Pre-Biased
Nåværende - Samler (Ic) (Maks) :
100mA
Spenning - Samlebrenningens nedbrytning (maks) :
50V
Motstand - base (R1) :
47 kOhms
Motstand - Emitter Base (R2) :
-
DC Current Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Nåværende - Collector Cutoff (Max) :
100nA (ICBO)
Frekvens - overgang :
200MHz
Kraft - Maks :
100mW
Monteringstype :
Surface Mount
Pakke / sak :
SC-70, SOT-323
Leverandørenhetspakke :
USM
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