APT50GN60BDQ2G Priser (USD) [14536stk Lager]
- 1 pcs$3.45949
- 10 pcs$3.11178
- 25 pcs$2.83493
- 100 pcs$2.55844
- 250 pcs$2.35098
- 500 pcs$2.14354
- 1,000 pcs$1.86696
- Delnummer:
- APT50GN60BDQ2G
- Produsent:
- Microsemi Corporation
- Detaljert beskrivelse:
- IGBT 600V 107A 366W TO247.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - spesialformål, Dioder - likerettere - matriser, Dioder - Zener - Arrays, Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - RF and Transistorer - IGBT-er - Arrays ...
- Konkurransefordel:
- We specialize in Microsemi Corporation APT50GN60BDQ2G electronic components. APT50GN60BDQ2G can be shipped within 24 hours after order. If you have any demands for APT50GN60BDQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT50GN60BDQ2G Produktegenskaper
Delnummer :
APT50GN60BDQ2G
Produsent :
Microsemi Corporation
Beskrivelse :
IGBT 600V 107A 366W TO247
Serie :
-
Delstatus :
Active
IGBT-type :
Trench Field Stop
Spenning - Samlebrenningens nedbrytning (maks) :
600V
Nåværende - Samler (Ic) (Maks) :
107A
Nåværende - Collector Pulsed (Icm) :
150A
Vce (på) (Max) @ Vge, Ic :
1.85V @ 15V, 50A
Kraft - Maks :
366W
Bytte energi :
1185µJ (on), 1565µJ (off)
Inngangstype :
Standard
Portladning :
325nC
Td (av / på) ved 25 ° C :
20ns/230ns
Testforhold :
400V, 50A, 4.3 Ohm, 15V
Omvendt gjenopprettingstid (trr) :
-
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Pakke / sak :
TO-247-3
Leverandørenhetspakke :
TO-247 [B]
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