FDP047N08-F102 Priser (USD) [48037stk Lager]
- 1 pcs$0.81397
- Delnummer:
- FDP047N08-F102
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 75V 164A TO220-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Tyristorer - DIAC, SIDAC and Dioder - Zener - Arrays ...
- Konkurransefordel:
- We specialize in ON Semiconductor FDP047N08-F102 electronic components. FDP047N08-F102 can be shipped within 24 hours after order. If you have any demands for FDP047N08-F102, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDP047N08-F102 Produktegenskaper
Delnummer :
FDP047N08-F102
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 75V 164A TO220-3
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
75V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
164A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
4.7 Ohm @ 80A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
152nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9415pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
268W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-220-3
Pakke / sak :
TO-220-3
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