IXFK180N10 Priser (USD) [5215stk Lager]
- 1 pcs$9.55325
- 10 pcs$8.68456
- 100 pcs$7.02181
- Delnummer:
- IXFK180N10
- Produsent:
- IXYS
- Detaljert beskrivelse:
- MOSFET N-CH 100V 180A TO-264AA.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Transistorer - Bipolar (BJT) - RF, Dioder - likerettere - singel, Tyristorer - SCR-er - moduler, Transistorer - FET, MOSFET - RF, Transistorer - FET, MOSFET - Arrays and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in IXYS IXFK180N10 electronic components. IXFK180N10 can be shipped within 24 hours after order. If you have any demands for IXFK180N10, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFK180N10 Produktegenskaper
Delnummer :
IXFK180N10
Produsent :
IXYS
Beskrivelse :
MOSFET N-CH 100V 180A TO-264AA
Serie :
HiPerFET™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
8 mOhm @ 90A, 10V
Vgs (th) (Max) @ Id :
4V @ 8mA
Gate Lading (Qg) (Max) @ Vgs :
390nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
10900pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
560W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
TO-264AA (IXFK)
Pakke / sak :
TO-264-3, TO-264AA
Siste nytt
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