Vishay Semiconductor Diodes Division - BZT52B8V2-G3-18

KEY Part #: K6499911

BZT52B8V2-G3-18 Priser (USD) [1954878stk Lager]

  • 1 pcs$0.01892
  • 10,000 pcs$0.01802

Delnummer:
BZT52B8V2-G3-18
Produsent:
Vishay Semiconductor Diodes Division
Detaljert beskrivelse:
DIODE ZENER 8.2V 410MW SOD123. Zener Diodes 8.2 Volt 0.5W 2%
Manufacturer's standard lead time:
På lager
Holdbarhet:
Ett år
Brikke fra:
Hong Kong
RoHS:
Betalingsmetode:
Forsendelsesmåte:
Familiekategorier:
KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - Arrays, Dioder - likerettere - matriser, Transistorer - spesialformål, Transistorer - FET, MOSFET - RF and Dioder - Variabel kapasitet (Varicaps, Varactors) ...
Konkurransefordel:
We specialize in Vishay Semiconductor Diodes Division BZT52B8V2-G3-18 electronic components. BZT52B8V2-G3-18 can be shipped within 24 hours after order. If you have any demands for BZT52B8V2-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BZT52B8V2-G3-18 Produktegenskaper

Delnummer : BZT52B8V2-G3-18
Produsent : Vishay Semiconductor Diodes Division
Beskrivelse : DIODE ZENER 8.2V 410MW SOD123
Serie : Automotive, AEC-Q101
Delstatus : Active
Spenning - Zener (Nom) (Vz) : 8.2V
Toleranse : ±2%
Kraft - Maks : 410mW
Impedans (maks) (Zzt) : 4.5 Ohms
Nåværende - Omvendt lekkasje @ Vr : 100nA @ 6V
Spenning - Fremover (Vf) (Maks) @ Hvis : -
Driftstemperatur : -55°C ~ 150°C
Monteringstype : Surface Mount
Pakke / sak : SOD-123
Leverandørenhetspakke : SOD-123

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