IRF6811STRPBF Priser (USD) [132815stk Lager]
- 1 pcs$0.45065
- 4,800 pcs$0.44841
- Delnummer:
- IRF6811STRPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N CH 25V 19A DIRECTFET.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - programmerbar enhet, Transistorer - IGBT-er - Arrays, Dioder - likerettere - matriser, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Dioder - Zener - Singel, Tyristorer - SCR-er - moduler, Transistorer - Bipolar (BJT) - RF and Power Driver-moduler ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRF6811STRPBF electronic components. IRF6811STRPBF can be shipped within 24 hours after order. If you have any demands for IRF6811STRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6811STRPBF Produktegenskaper
Delnummer :
IRF6811STRPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N CH 25V 19A DIRECTFET
Serie :
HEXFET®
Delstatus :
Not For New Designs
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
25V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
19A (Ta), 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
3.7 mOhm @ 19A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 35µA
Gate Lading (Qg) (Max) @ Vgs :
17nC @ 4.5V
Vgs (maks) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
1590pF @ 13V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.1W (Ta), 32W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
DIRECTFET™ SQ
Pakke / sak :
DirectFET™ Isometric SQ
Siste nytt
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