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- Delnummer:
- IRFU12N25DPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 250V 14A I-PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - FET, MOSFET - Arrays, Transistorer - IGBT-er - Arrays, Transistorer - FET, MOSFET - En, Dioder - Zener - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor, Transistorer - Bipolar (BJT) - RF and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFU12N25DPBF electronic components. IRFU12N25DPBF can be shipped within 24 hours after order. If you have any demands for IRFU12N25DPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFU12N25DPBF Produktegenskaper
Delnummer :
IRFU12N25DPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 250V 14A I-PAK
Serie :
HEXFET®
Delstatus :
Obsolete
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
250V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
260 mOhm @ 8.4A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
810pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
144W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Through Hole
Leverandørenhetspakke :
IPAK (TO-251)
Pakke / sak :
TO-251-3 Short Leads, IPak, TO-251AA
Siste nytt
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