NVMFS4C05NT1G Priser (USD) [281148stk Lager]
- 1 pcs$0.13156
- 3,000 pcs$0.11923
- Delnummer:
- NVMFS4C05NT1G
- Produsent:
- ON Semiconductor
- Detaljert beskrivelse:
- MOSFET N-CH 30V 116A SO8FL.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - RF, Dioder - Zener - Singel, Transistorer - FET, MOSFET - En, Tyristorer - TRIAC, Transistorer - Bipolar (BJT) - Singel, Dioder - likerettere - matriser, Dioder - RF and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in ON Semiconductor NVMFS4C05NT1G electronic components. NVMFS4C05NT1G can be shipped within 24 hours after order. If you have any demands for NVMFS4C05NT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFS4C05NT1G Produktegenskaper
Delnummer :
NVMFS4C05NT1G
Produsent :
ON Semiconductor
Beskrivelse :
MOSFET N-CH 30V 116A SO8FL
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
24.7A (Ta), 116A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
3.4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1972pF @ 15V
FET-funksjon :
-
Effektdissipasjon (maks) :
3.61W (Ta), 79W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
5-DFN (5x6) (8-SOFL)
Pakke / sak :
8-PowerTDFN
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