TPH1110ENH,L1Q Priser (USD) [147789stk Lager]
- 1 pcs$0.26284
- 5,000 pcs$0.26154
- Delnummer:
- TPH1110ENH,L1Q
- Produsent:
- Toshiba Semiconductor and Storage
- Detaljert beskrivelse:
- MOSFET N-CH 200V 7.2A 8SOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Tyristorer - SCR, Tyristorer - DIAC, SIDAC, Dioder - likerettere - singel, Transistorer - FET, MOSFET - RF, Transistorer - Bipolar (BJT) - Arrays, Transistorer - spesialformål and Transistorer - programmerbar enhet ...
- Konkurransefordel:
- We specialize in Toshiba Semiconductor and Storage TPH1110ENH,L1Q electronic components. TPH1110ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPH1110ENH,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPH1110ENH,L1Q Produktegenskaper
Delnummer :
TPH1110ENH,L1Q
Produsent :
Toshiba Semiconductor and Storage
Beskrivelse :
MOSFET N-CH 200V 7.2A 8SOP
Serie :
U-MOSVIII-H
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
200V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
114 mOhm @ 3.6A, 10V
Vgs (th) (Max) @ Id :
4V @ 200µA
Gate Lading (Qg) (Max) @ Vgs :
7nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
600pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
1.6W (Ta), 42W (Tc)
Driftstemperatur :
150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
8-SOP Advance (5x5)
Pakke / sak :
8-PowerVDFN
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