SI7501DN-T1-GE3 Priser (USD) [3907stk Lager]
- 1 pcs$0.53517
- 10 pcs$0.47413
- 100 pcs$0.37487
- 500 pcs$0.27500
- 1,000 pcs$0.21711
- Delnummer:
- SI7501DN-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N/P-CH 30V 5.4A 1212-8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - FET, MOSFET - En, Dioder - Zener - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Zener - Arrays, Transistorer - FET, MOSFET - Arrays, Transistorer - Bipolar (BJT) - Singel, Dioder - Variabel kapasitet (Varicaps, Varactors) and Tyristorer - TRIAC ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI7501DN-T1-GE3 electronic components. SI7501DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7501DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7501DN-T1-GE3 Produktegenskaper
Delnummer :
SI7501DN-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N/P-CH 30V 5.4A 1212-8
Serie :
TrenchFET®
Delstatus :
Obsolete
FET Type :
N and P-Channel, Common Drain
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
30V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
5.4A, 4.5A
Rds On (Max) @ Id, vgs :
35 mOhm @ 7.7A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kraft - Maks :
1.6W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
PowerPAK® 1212-8 Dual
Leverandørenhetspakke :
PowerPAK® 1212-8 Dual
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