Beskrivelse :
MOSFET P-CH 100V 18A TO-263
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
100V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
120 mOhm @ 9A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
2100pF @ 25V
Effektdissipasjon (maks) :
83W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-263 (IXTA)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB