VS-GB50TP120N Priser (USD) [1278stk Lager]
- 1 pcs$33.87746
- 24 pcs$32.26421
- Delnummer:
- VS-GB50TP120N
- Produsent:
- Vishay Semiconductor Diodes Division
- Detaljert beskrivelse:
- IGBT 1200V 100A 446W INT-A-PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, pre-partisk, Dioder - Zener - Singel, Dioder - Bridge likerettere, Power Driver-moduler, Transistorer - FET, MOSFET - RF and Tyristorer - SCR ...
- Konkurransefordel:
- We specialize in Vishay Semiconductor Diodes Division VS-GB50TP120N electronic components. VS-GB50TP120N can be shipped within 24 hours after order. If you have any demands for VS-GB50TP120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB50TP120N Produktegenskaper
Delnummer :
VS-GB50TP120N
Produsent :
Vishay Semiconductor Diodes Division
Beskrivelse :
IGBT 1200V 100A 446W INT-A-PAK
Serie :
-
Delstatus :
Active
IGBT-type :
-
konfigurasjon :
Half Bridge
Spenning - Samlebrenningens nedbrytning (maks) :
1200V
Nåværende - Samler (Ic) (Maks) :
100A
Kraft - Maks :
446W
Vce (på) (Max) @ Vge, Ic :
2.15V @ 15V, 50A
Nåværende - Collector Cutoff (Max) :
5mA
Input Capacitance (Cies) @ Vce :
4.29nF @ 25V
Input :
Standard
NTC Thermistor :
No
Driftstemperatur :
150°C (TJ)
Monteringstype :
Chassis Mount
Pakke / sak :
INT-A-PAK (3 + 4)
Leverandørenhetspakke :
INT-A-PAK
Siste nytt
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