SQ3419AEEV-T1_GE3 Priser (USD) [306526stk Lager]
- 1 pcs$0.12067
- Delnummer:
- SQ3419AEEV-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CHANNEL 40V 6.9A 6TSOP.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - IGBT-er - moduler, Transistorer - Bipolar (BJT) - Singel, Transistorer - Bipolar (BJT) - Arrays, Transistorer - programmerbar enhet, Power Driver-moduler, Transistorer - IGBT-er - Arrays, Transistorer - Bipolar (BJT) - Enkelt, forhåndsfor and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQ3419AEEV-T1_GE3 electronic components. SQ3419AEEV-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ3419AEEV-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ3419AEEV-T1_GE3 Produktegenskaper
Delnummer :
SQ3419AEEV-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CHANNEL 40V 6.9A 6TSOP
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
61 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
12.5nC @ 4.5V
Vgs (maks) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
975pF @ 20V
FET-funksjon :
-
Effektdissipasjon (maks) :
5W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
6-TSOP
Pakke / sak :
SOT-23-6 Thin, TSOT-23-6
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