IRFL014NPBF Priser (USD) [13771stk Lager]
- 80 pcs$0.23789
- Delnummer:
- IRFL014NPBF
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 55V 1.9A SOT223.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - likerettere - singel, Transistorer - FET, MOSFET - Arrays, Transistorer - FET, MOSFET - En, Transistorer - Bipolar (BJT) - RF, Tyristorer - SCR, Tyristorer - TRIAC, Transistorer - programmerbar enhet and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IRFL014NPBF electronic components. IRFL014NPBF can be shipped within 24 hours after order. If you have any demands for IRFL014NPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFL014NPBF Produktegenskaper
Delnummer :
IRFL014NPBF
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 55V 1.9A SOT223
Serie :
HEXFET®
Delstatus :
Discontinued at Digi-Key
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
55V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
160 mOhm @ 1.9A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
11nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
190pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
1W (Ta)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
SOT-223
Pakke / sak :
TO-261-4, TO-261AA
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