BSB165N15NZ3GXUMA1 Priser (USD) [54861stk Lager]
- 1 pcs$0.71272
- Delnummer:
- BSB165N15NZ3GXUMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 150V 9A WDSON-2.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Singel, Dioder - RF, Transistorer - IGBT-er - singel, Power Driver-moduler, Tyristorer - TRIAC, Dioder - Zener - Arrays, Transistorer - IGBT-er - moduler and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies BSB165N15NZ3GXUMA1 electronic components. BSB165N15NZ3GXUMA1 can be shipped within 24 hours after order. If you have any demands for BSB165N15NZ3GXUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSB165N15NZ3GXUMA1 Produktegenskaper
Delnummer :
BSB165N15NZ3GXUMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 150V 9A WDSON-2
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
150V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
9A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
8V, 10V
Rds On (Max) @ Id, vgs :
16.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
4V @ 110µA
Gate Lading (Qg) (Max) @ Vgs :
35nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2800pF @ 75V
FET-funksjon :
-
Effektdissipasjon (maks) :
2.8W (Ta), 78W (Tc)
Driftstemperatur :
-40°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
MG-WDSON-2, CanPAK M™
Pakke / sak :
3-WDSON
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