IPB90R340C3ATMA1 Priser (USD) [33804stk Lager]
- 1 pcs$1.21918
- 1,000 pcs$1.03271
- Delnummer:
- IPB90R340C3ATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 900V 15A TO-263.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - Arrays, Dioder - likerettere - matriser, Power Driver-moduler, Dioder - Variabel kapasitet (Varicaps, Varactors), Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Arrays and Transistorer - Bipolar (BJT) - Arrays ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB90R340C3ATMA1 electronic components. IPB90R340C3ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB90R340C3ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB90R340C3ATMA1 Produktegenskaper
Delnummer :
IPB90R340C3ATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 900V 15A TO-263
Serie :
CoolMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
900V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
340 mOhm @ 9.2A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 1mA
Gate Lading (Qg) (Max) @ Vgs :
94nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2400pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
208W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263AB)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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