SQS411ENW-T1_GE3 Priser (USD) [250794stk Lager]
- 1 pcs$0.14748
- Delnummer:
- SQS411ENW-T1_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET P-CH 40V PPAK 1212-8W.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Zener - Arrays, Transistorer - FET, MOSFET - En, Tyristorer - TRIAC, Transistorer - JFET-er, Tyristorer - DIAC, SIDAC, Power Driver-moduler, Dioder - Zener - Singel and Transistorer - FET, MOSFET - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQS411ENW-T1_GE3 electronic components. SQS411ENW-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQS411ENW-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQS411ENW-T1_GE3 Produktegenskaper
Delnummer :
SQS411ENW-T1_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET P-CH 40V PPAK 1212-8W
Serie :
Automotive, AEC-Q101, TrenchFET®
Delstatus :
Active
FET Type :
P-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
40V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
27.3 mOhm @ 8A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
50nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3191pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
53.6W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® 1212-8W
Pakke / sak :
PowerPAK® 1212-8W
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