SI4943BDY-T1-GE3 Priser (USD) [93995stk Lager]
- 1 pcs$0.41807
- 2,500 pcs$0.41599
- Delnummer:
- SI4943BDY-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET 2P-CH 20V 6.3A 8-SOIC.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - Bridge likerettere, Transistorer - Bipolar (BJT) - Arrays, Tyristorer - TRIAC, Dioder - RF, Tyristorer - SCR, Transistorer - spesialformål, Dioder - likerettere - matriser and Transistorer - JFET-er ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SI4943BDY-T1-GE3 electronic components. SI4943BDY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4943BDY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4943BDY-T1-GE3 Produktegenskaper
Delnummer :
SI4943BDY-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET 2P-CH 20V 6.3A 8-SOIC
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
2 P-Channel (Dual)
FET-funksjon :
Logic Level Gate
Drenering til kildespenning (Vdss) :
20V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
6.3A
Rds On (Max) @ Id, vgs :
19 mOhm @ 8.4A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
25nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kraft - Maks :
1.1W
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Pakke / sak :
8-SOIC (0.154", 3.90mm Width)
Leverandørenhetspakke :
8-SO
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