SIHB22N60AE-GE3 Priser (USD) [21158stk Lager]
- 1 pcs$1.88620
- 10 pcs$1.68347
- 100 pcs$1.38036
- 500 pcs$1.06044
- 1,000 pcs$0.89434
- Delnummer:
- SIHB22N60AE-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 600V 20A D2PAK.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Dioder - RF, Transistorer - FET, MOSFET - Arrays, Dioder - Bridge likerettere, Transistorer - JFET-er, Transistorer - programmerbar enhet, Tyristorer - DIAC, SIDAC, Dioder - likerettere - singel and Transistorer - IGBT-er - singel ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHB22N60AE-GE3 electronic components. SIHB22N60AE-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB22N60AE-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB22N60AE-GE3 Produktegenskaper
Delnummer :
SIHB22N60AE-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 600V 20A D2PAK
Serie :
E
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
180 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
96nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1451pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
179W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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