SQD50N06-09L_GE3 Priser (USD) [35079stk Lager]
- 1 pcs$1.17485
- 2,000 pcs$1.00316
- Delnummer:
- SQD50N06-09L_GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 60V 50A.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Singel, Dioder - Zener - Singel, Power Driver-moduler, Tyristorer - SCR, Transistorer - programmerbar enhet, Transistorer - spesialformål, Transistorer - Bipolar (BJT) - Arrays, pre-partisk and Transistorer - Bipolar (BJT) - RF ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SQD50N06-09L_GE3 electronic components. SQD50N06-09L_GE3 can be shipped within 24 hours after order. If you have any demands for SQD50N06-09L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQD50N06-09L_GE3 Produktegenskaper
Delnummer :
SQD50N06-09L_GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 60V 50A
Serie :
TrenchFET®
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
9 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
72nC @ 10V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3065pF @ 25V
FET-funksjon :
-
Effektdissipasjon (maks) :
136W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
TO-252, (D-Pak)
Pakke / sak :
TO-252-3, DPak (2 Leads + Tab), SC-63
Siste nytt
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