IPB019N06L3GATMA1 Priser (USD) [39781stk Lager]
- 1 pcs$0.98287
- Delnummer:
- IPB019N06L3GATMA1
- Produsent:
- Infineon Technologies
- Detaljert beskrivelse:
- MOSFET N-CH 60V 120A TO263-3.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Transistorer - Bipolar (BJT) - Arrays, Transistorer - IGBT-er - Arrays, Tyristorer - SCR-er - moduler, Transistorer - IGBT-er - singel, Tyristorer - TRIAC, Transistorer - programmerbar enhet, Transistorer - Bipolar (BJT) - Singel and Dioder - Bridge likerettere ...
- Konkurransefordel:
- We specialize in Infineon Technologies IPB019N06L3GATMA1 electronic components. IPB019N06L3GATMA1 can be shipped within 24 hours after order. If you have any demands for IPB019N06L3GATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB019N06L3GATMA1 Produktegenskaper
Delnummer :
IPB019N06L3GATMA1
Produsent :
Infineon Technologies
Beskrivelse :
MOSFET N-CH 60V 120A TO263-3
Serie :
OptiMOS™
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
60V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, vgs :
1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 196µA
Gate Lading (Qg) (Max) @ Vgs :
166nC @ 4.5V
Vgs (maks) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
28000pF @ 30V
FET-funksjon :
-
Effektdissipasjon (maks) :
250W (Tc)
Driftstemperatur :
-55°C ~ 175°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
D²PAK (TO-263AB)
Pakke / sak :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Siste nytt
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