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Hvis plasseringen din ikke er oppført, kan du velge ett av følgende:

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Samsung Semiconductor - K4B4G0846D-BYK0

KEY Part #: K7359674

[17080stk Lager]

    Delnummer:
    K4B4G0846D-BYK0
    Produsent:
    Samsung Semiconductor
    Detaljert beskrivelse:
    4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    På lager
    Holdbarhet:
    Ett år
    Brikke fra:
    Hong Kong
    RoHS:
    Betalingsmetode:
    Forsendelsesmåte:
    Familiekategorier:
    KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: LPDDR5, HBM Aquabolt, HBM Flarebolt, DDR3, LPDDR3, LPDDR4X, SLC Nand and DDR4 ...
    Konkurransefordel:
    We specialize in Samsung Semiconductor K4B4G0846D-BYK0 electronic components. K4B4G0846D-BYK0 can be shipped within 24 hours after order. If you have any demands for K4B4G0846D-BYK0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B4G0846D-BYK0 Produktegenskaper

    Delnummer : K4B4G0846D-BYK0
    Produsent : Samsung Semiconductor
    Beskrivelse : 4 Gb 512M x 8 1600 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serie : DDR3
    tetthet : 4 Gb
    Org. : 512M x 8
    Hastighet : 1600 Mbps
    Spenning : 1.35 V
    Temp. : 0 ~ 85 °C
    Pakke : 78FBGA
    Product Status : Mass Production

    Siste nytt

    How Will 5G Impact on Memory?
    Samsung Electronics Introduces New High Bandwidth Memory Technology Tailored to Data Centers, Graphic Applications, and AI
    Samsung Begins Mass Production of Industry’s First 12Gb LPDDR5 Mobile DRAM for Premium Smartphones
    An Exclusive Look Inside Samsung’s Memory Exhibit at MWC
    Samsung Launches Industry’s First 12Gb LPDDR4 DRAM
    NF1 SSD, Reach New Heights with Hyper-Scalable Datacenters
    Samsung Honored for Outstanding Design and Engineering with 36 CES 2018 Innovation Awards
    The future of NAND technology
    Samsung Now Mass Producing Industry’s Most Advanced 4Gb DDR3, Using 20 Nanometer Process Technology
    Samsung Electronics Begins Mass Production of Industry's First 12GB LPDDR4X-based uMCP
    Exploring the Key Samsung Technologies That Enabled 10nm-Class DRAM
    5G and Memory - from Connected Thinking to Connected Living
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