SIHH14N60E-T1-GE3 Priser (USD) [48426stk Lager]
- 1 pcs$0.81146
- 3,000 pcs$0.80742
- Delnummer:
- SIHH14N60E-T1-GE3
- Produsent:
- Vishay Siliconix
- Detaljert beskrivelse:
- MOSFET N-CH 600V 16A POWERPAK8X8.
- Manufacturer's standard lead time:
- På lager
- Holdbarhet:
- Ett år
- Brikke fra:
- Hong Kong
- RoHS:
- Betalingsmetode:
-
- Forsendelsesmåte:
- Familiekategorier:
- KEY Components Co., LTD er en distributør av elektroniske komponenter som tilbyr produktkategorier inkludert: Tyristorer - DIAC, SIDAC, Transistorer - IGBT-er - Arrays, Transistorer - IGBT-er - singel, Transistorer - Bipolar (BJT) - Singel, Dioder - Bridge likerettere, Transistorer - spesialformål, Dioder - Zener - Arrays and Transistorer - IGBT-er - moduler ...
- Konkurransefordel:
- We specialize in Vishay Siliconix SIHH14N60E-T1-GE3 electronic components. SIHH14N60E-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIHH14N60E-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHH14N60E-T1-GE3 Produktegenskaper
Delnummer :
SIHH14N60E-T1-GE3
Produsent :
Vishay Siliconix
Beskrivelse :
MOSFET N-CH 600V 16A POWERPAK8X8
Serie :
-
Delstatus :
Active
FET Type :
N-Channel
Teknologi :
MOSFET (Metal Oxide)
Drenering til kildespenning (Vdss) :
600V
Strøm - Kontinuerlig avløp (Id) @ 25 ° C :
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, vgs :
255 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Lading (Qg) (Max) @ Vgs :
82nC @ 10V
Vgs (maks) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1416pF @ 100V
FET-funksjon :
-
Effektdissipasjon (maks) :
147W (Tc)
Driftstemperatur :
-55°C ~ 150°C (TJ)
Monteringstype :
Surface Mount
Leverandørenhetspakke :
PowerPAK® 8 x 8
Pakke / sak :
8-PowerTDFN
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